Fabrication and Characterization of Semiconductor Nanowires

Zusatztext

One-dimensional semiconductor nanowires are considered to be promising materials for future nanoelectronic applications. However, before these nanowires can be integrated into such devices, a thorough understanding of their growth behaviour is necessary. In particular, methods that allow the control over nanowire growth are deemed especially important, as it is these methods that will enable the control of nanowire dimensions such as length and diameter. The production of nanowires with high-aspect ratios is vital in order to take advantage of the unique properties experienced at the nanoscale, thus allowing us to maximise their use in next-generation electronics. Additionally, the development of low-resistivity interconnects is desirable in order to connect such nanowires in multi-nanowire components. Consequently, this book aims to discuss the synthesis and characterisation of semiconductor nanowires and metal interconnects, as they apply to future electronics applications.

Autorenportrait

Colm O'Regan earned his Ph.D. in materials science and electron microscopy from Tyndall National Institute, Ireland, one of Europe's leading research centres in Information and Communications Technology (ICT). He specializes in the structural analysis of materials using electron microscopy, including tools such as SEM, TEM, STEM, EDX and FIB.

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