Atomic layer deposition of aluminum oxide on crystalline silicon

Zusatztext

In the present dissertation, Florian Werner investigates the application of atomic layer deposition (ALD) of amorphous aluminum oxide (Al2O3) dielectric layers to silicon solar cells. Highlights of his thesis include: A novel spatial ALD process, which is compatible with industry demands. A comprehensive model of the cSi/Al2O3 interface, which describes the chemical composition of the deposited film and electronhole recombination at the interface. An improved parameterization of intrinsic lifetimes in silicon, which accounts for Coulombenhanced Auger and radiative recombination. An Al2O3induced hole inversion layer (IL) as holecollecting emitter in IL solar cells made on ntype silicon, allowing efficiencies above 26%.

Autorenportrait

Florian Werner studied physics at the Georg-August-Universität Göttingen, where he graduated in the field of nanowire growth and characterization. He then joined the Institute for Solar Energy Research Hamelin (ISFH) for his doctoral studies on silicon photovoltaics.

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